Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.

Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si3N4 and HfO2 gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO2 layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si3N4 gate insulator, despite the HfO2 gate insulator exhibiting better radiation resistance compared to the Si3N4 gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO2 gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator.

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.

The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 gate dielectric layer. The γ-ray radiation hardness according to the gate dielectric layer was also compared between the two different GaN-based MIS-HEMTs. Although HfO2 has exhibited strong tolerance to the total ionizing dose effect in Si-based devices, there is no detail report of the γ-ray radiation effects in GaN-based MIS-HEMTs employing a HfO2 gate dielectric layer. The pulsed-mode stress measurement results and carrier mobility behavior revealed that the device properties not only have direct current (DC) characteristics, but radio frequency (RF) performance has also been mostly degraded by the deterioration of the gate dielectric quality and the trapped charges inside the gate insulator. We also figured out that the immunity to the γ-ray radiation was improved when HfO2 was employed instead of SiN as a gate dielectric layer due to its stronger endurance to the γ-ray irradiation. Our results highlight that the application of a gate insulator that shows superior immunity to the γ-ray irradiation is a crucial factor for the improvement of the total ionizing dose effect in GaN-based MIS-HEMTs.

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.

Laxative Activity of the Hot-Water Extract Mixture of Hovenia dulcis Thunb. and Phyllostachys pubescens Mazel in Chronic Constipation Model SD Rats.

This study examined the laxative effects of hot-water extracts of Hovenia dulcis Thunb. (HD), Phyllostachys pubescens Mazel (PM), and a 2:8 mixture of both (HP) in two chronic constipation models. For the loperamide-induced constipation model, animals were divided into an untreated group, negative control group (loperamide 4 mg/kg), positive control group (bisacodyl 4 mg/kg) group, and six treatment groups (HP 100 or 400, HD 50 or 100, and PM 100 or 400 mg/kg). For the lowfiber diet-induced constipation model, animals were divided into an untreated group (normal diet), negative control group (low-fiber diet), positive control group (Agio granule, 620 mg/kg), and the same treatment groups. Fecal number, weight, fecal water content, and intestinal transit ratio were higher in the groups treated with HP, HD, and PM than in the groups treated with loperamide or lowfiber diet. Thickness of colon mucosa and muscle layers were increased in the treated groups. Colon tension increased in the HP groups, and [Ca2+]i measurements using fura-2 as an indicator showed that HP inhibits ATP-mediated Ca2+ influx in IEC-18 cells. These results showed that the HP mixture has laxative activity by increased mucin secretion and inducing contractile activity and relaxation. It may be a useful therapeutic strategy for ameliorating in chronic constipation.

Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays.

Metal-insulator transition (MIT) in strongly correlated electronic materials has enormous potential with scientific and technological impacts in future oxide nanoelectronic devices. Although photo-induced MIT can provide opportunities to extend the novel functionality of strongly correlated electronic materials, there have rarely been reports on it. Here, we report MIT provoked by visible-near-infrared light in Ag-decorated VO2 nanorod arrays (NRs) because of localized surface plasmon resonance (LSPR) and its application to broadband photodetectors. Our simulation results based on the finite-difference time-domain method show that the electric field resulting from LSPR can be generated at the interface between Ag nanoparticles and VO2 layers under vis NIR illumination. Using high-resolution transmission electronic microscopy and Raman spectroscopy, we observe the MIT and structural phase transition in the Ag-decorated VO2 NRs due to the LSPR effect. The optoelectronic measurements confirm that high, fast, and broad photoresponse of Ag-decorated VO2 NRs is attributed to photo-induced MIT due to LSPR. Our study will open up a new strategy to trigger MIT in strongly correlated electronic materials through functionalization with plasmonic nanoparticles and serve as a valuable proof of concept for next-generation optoelectronic devices with fast response, low power consumption, and high performance.

Dapsone as a potential treatment option for Henoch-Schönlein Purpura (HSP).

Henoch-Schönlein Purpura (HSP, IgA vasculitis) is an immunoglobulin A (IgA) mediated disorder characterized by systemic vasculitis with variable presentation, frequently affecting the skin, mucous membrane, joints, kidneys, and rarely lungs and the central nervous system. Interestingly, enhanced production of interleukin-8 (IL-8) levels are found during active disease and increased levels have been reported in supernatants from human umbilical venous endothelial cells after stimulation with sera from patients affected by HSP. While corticosteroid therapy is currently the recommended treatment for HSP, dapsone, an anti-leprosy agent, has also recently been suggested to have therapeutic efficacy due to its ability to suppress IL-8. Moreover, in addition to IL-8 suppression, dapsone has been reported to exert various anti-inflammatory effects by inhibiting the generation of toxic free radicals, myeloperoxidase mediated halogenation that converts H2O2 to HOCl, leukocyte chemotaxis, production of tumor necrosis factor, and other anti-inflammatory molecules. This review aims to provide a solid hypothesis for the pathogenesis of vasculitis in HSP. Moreover, we highlight potential mechanistic actions of dapsone in hopes that dapsone may be considered as an alternative viable treatment for patients affected by HSP.

Bond strength of individual carbon nanotubes grown directly on carbon fibers.

The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (∼200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

Core/shell-structured upconversion nanophosphor and cadmium-free quantum-dot bilayer-based near-infrared photodetectors.

The core/shell-structured upconversion nanophosphors (UCNPs) and Cd-free CuInS(2)/ZnS quantum dots (QDs) were synthesized via coprecipitation and hot-injection methods, respectively, and they were applied to near infrared (NIR) photodetectors. The ß-NaYF(4):Yb,Er/ß-NaYF(4) UCNPs emitted intense visible light peaking at 522, 542, and 656 nm via (2)H(11/2), (4)S(3/2), and (4)F(9/2)→(4)I(15/2) transitions under excitation with 980 nm NIR light. The core/shell UCNPs showed 6.4 times higher emission intensity than core UCNPs. Charge carriers can be generated from CuInS(2)/ZnS QDs in the QD-UCNP mixture due to their broad absorption in the visible spectral region shorter than 600 nm. The photodetector devices were fabricated by spin-coating CuInS(2)/ZnS QDs on a SiO(2)/Si substrate with patterned gold electrodes followed by spin-coating UCNPs on the QD layer. The fabricated QD-UCNP-bilayer-based device showed a drastically increased photocurrent (128 µA) compared with the QD-layer-based device under 980 nm NIR light illumination. Additionally, the fabricated device showed stable ON-OFF switching properties against on and off NIR light.

Design and application of a novel in situ nano-manipulation stage for transmission electron microscopy.

A novel nano-scale manipulator capable of handling low-dimensional materials with three-dimensional linear motion, gripping action, and push-pull action of the gripper was developed for an in situ experiment in transmission electron microscopy. X-Y-Z positioning and push-pull action were accomplished by a piezotubing system, combined with a specially designed assembly stage that consisted of a lever-action gripping tip backed by a push-pull piezostack. The gripper tip consisted of tungsten wire fabricated by electrochemical etching followed by a focused ion beam process. Performance of the nano-scale manipulator was demonstrated in a grab-and-pick test of a single silver nanowire and in an in situ tensile test of a pearlitic steel sample with a specific orientation.

Design of Circle Array Pattern for Transparent Nanomesh-Type Electrodes.

In this study, we report simulation results for the optical properties of nanomesh-type electrodes for transparent electrode. Usually, indium tin oxide (ITO) is commonly used for transparent conductor to solar cell, display, LED and other electronic modules. However, the cost is high due to the rarity of indium. An alternative way is use of transparent nanomesh-type metal electrode for solar cell. Finite different time domain (FDTD) method was used to simulate and analyze their optical properties. Various array patterns (square, circle and circle hexagonal array) of metal on glass (SiO2) substrates were designed and their properties of transmission and reflection were simulated by using the broad band (λ = 300~1200 nm) plane wave source. To compare basic characteristics of each pattern, various structural parameters such as hole diameter, pitch and metal thickness were applied. The effect of three typical metals, such as Ag, Au, and Al was also compared. In the results, we will discuss about large dip of transmission appeared at the particular wavelength region from the circle array pattern, which is design with pitch of 500 nm at the wavelength range 700 to 800 nm. The surface plasmonpolaritons (SPP) effect can be the cause of large dip and we could find a broad and high transmission from the properly designed in nanomesh-type electrodes, which was calculated as a function of wavelength.

Graphene as an atomically thin barrier to Cu diffusion into Si.

The evolution of copper-based interconnects requires the realization of an ultrathin diffusion barrier layer between the Cu interconnect and insulating layers. The present work reports the use of atomically thin layer graphene as a diffusion barrier to Cu metallization. The diffusion barrier performance is investigated by varying the grain size and thickness of the graphene layer; single-layer graphene of average grain size 2 ± 1 µm (denoted small-grain SLG), single-layer graphene of average grain size 10 ± 2 µm (denoted large-grain SLG), and multi-layer graphene (MLG) of thickness 5-10 nm. The thermal stability of these barriers is investigated after annealing Cu/small-grain SLG/Si, Cu/large-grain SLG/Si, and Cu/MLG/Si stacks at different temperatures ranging from 500 to 900 °C. X-ray diffraction, transmission electron microscopy, and time-of-flight secondary ion mass spectroscopy analyses confirm that the small-grain SLG barrier is stable after annealing up to 700 °C and that the large-grain SLG and MLG barriers are stable after annealing at 900 °C for 30 min under a mixed Ar and H2 gas atmosphere. The time-dependent dielectric breakdown (TDDB) test is used to evaluate graphene as a Cu diffusion barrier under real device operating conditions, revealing that both large-grain SLG and MLG have excellent barrier performance, while small-grain SLG fails quickly. Notably, the large-grain SLG acts as a better diffusion barrier than the thicker MLG in the TDDB test, indicating that the grain boundary density of a graphene diffusion barrier is more important than its thickness. The near-zero-thickness SLG serves as a promising Cu diffusion barrier for advanced metallization.

Electrical coating method of graphene oxide.

In this work, we use the electrical method to coat graphene oxide (GO) on ITO (Indium Tin Oxide) glass. The coated GO was characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The coated surface was monitored by scanning electron microscope (SEM) and atomic force microscope (AFM). Based on this coating method, we can control the thickness of GO film by changing the applied voltage. Result of thickness control was analyzed by AFM and transmittance measurement. Also this method can selectively deposition of GO film is possible on patterned ITO. This result was confirmed by Raman spectroscopic mapping.

Nanopatterning by laser interference lithography: applications to optical devices.

A systematic review, covering fabrication of nanoscale patterns by laser interference lithography (LIL) and their applications for optical devices is provided. LIL is a patterning method. It is a simple, quick process over a large area without using a mask. LIL is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with LIL are the platform for further fabrication of nanostructures and growth of functional materials used as the building blocks for devices. Demonstration of optical and photonic devices by LIL is reviewed such as directed nanophotonics and surface plasmon resonance (SPR) or large area membrane reflectors and anti-reflectors. Perspective on future directions for LIL and emerging applications in other fields are presented.

Activation of NF-κB pathway in oral buccal mucosa during small intestinal ischemia-reperfusion injury.

BACKGROUND: Intestinal ischemia-reperfusion injury induces intestinal mucosal barrier disruption, systemic inflammatory response syndrome, multiorgan failure, and death. The major pathway for the systemic inflammatory responses depends on nuclear factor kappa B (NF-κB). However, direct measuring of NF-κB in injured tissues is not routinely available. Our aim was to determine whether NF-кB pathway in buccal mucosa is activated during intestinal ischemia-reperfusion injury. MATERIALS AND METHODS: Male Sprague-Dawley rats were prepared for the animal experiment. Superior mesenteric artery (SMA) was exposed and clamped for 30 min in the intestinal ischemia-reperfusion (IR) group. SMA was exposed only in control group. Serum, buccal mucosa, and small intestinal mucosa were harvested in 90 min after reperfusion in IR or 120 min after SMA exposure in control group. Serum cytokine levels and tissue NF-κB pathway activities were measured. RESULTS: Serum TNF-α (5.49 ± 2.72 versus 1.77 ± 1.20 pg/mL, P = 0.002) and interleukin-6 (232.32 ± 29.98 versus 115.92 ± 17.81 pg/mL, P = 0.002) levels were significantly higher in IR than control group. Intestinal mucosal cytoplasmic phosphorylated inhibitor kappa B (IκB)/IκB ratio, nuclear NF-κB expression, and NF-κB DNA-binding activity were significantly higher in IR than control group. Buccal mucosal cytoplasmic phosphorylated IκB/IκB ratio, nuclear NF-κB expression, and NF-κB DNA-binding activity were also higher in IR than control group. CONCLUSION: Buccal mucosal NF-κB pathway was activated by intestinal ischemia-reperfusion injury. The present study suggests that buccal mucosal may be considered as an indicator for the assessment of intestinal ischemia-reperfusion injury.

Growth and thermoelectric properties of multilayer thin film of bismuth telluride and indium selenide via rf magnetron sputtering.

A bismuth telluride (BT)/indium selenide (IS) multilayer film was deposited at room temperature by rf magnetron sputtering on a sapphire substrate in order to investigate how the multilayered structure affects the microstructure and thermoelectric properties. The effect of annealing at different temperatures was also studied. The results were compared with those from a BT film with the same thickness. A TEM study showed that the interface between the BT and IS layers became vague as the annealing temperature increased, and the BT layer crystallized while the IS layer did not. The presence of thin IS layers can help to limit the evaporation of Te from the BT/IS multilayer film, thus increasing the amount of Bi2Te3 phase in the multilayer film as compared with that of the BT film. An abrupt increase in the Seebeck coefficient of the multilayer film was observed when annealed at 300 degrees C, and the resistivity of the annealed multilayer film was high compared to that of the BT film. This result can also be explained by the proposed role of the IS layer, which limits the evaporation of Te at high temperature. The highest power factor of -3.9 x 10(-6) W/K2 cm was obtained at room temperature from the multilayer film annealed at 300 degrees C.

A case report on the change of the refractive power after a blunt trauma.

PURPOSE: To determine the pathogenesis of transient myopia after blunt eye trauma. METHODS: In one patient, the refraction of both eyes (the left eye was injured, but the right eye was not) was measured with an autorefractometer. The cycloplegic refraction was measured at the early stage of trauma and again 3 months after the blunt eye injury. The angle and depth of the anterior chamber, the ciliary body, and the choroids were examined by ultrasound biomicroscopy (UBM) over 3 months. The depth of the anterior chamber, the thickness of the lens, and the axial length were measured by A-scan ultrasonography in both eyes. During the 3 months after the injury, we made comparisons between the menifest and the cycloplegic refractions, the depths of anterior chambers, the thickness of the lenses, the axial lengths, and the UBM-determined appearances of the angles and depths of the anterior chambers, the ciliary bodies, and the choroids in both eyes. RESULTS: We suspect that the depth reduction in the anterior chamber, the increase in anterior to posterior lens diameter, and the edema in the ciliary body are all related to the change in the refractive power following the blunt trauma. CONCLUSIONS: Ultrasound biomicroscopy (UBM) and ultrasonography of the anterior segment in the eye may be helpful to diagnose and confirm changes in the refractive power that occur after trauma.

Prevalence and risk factors for cataracts in persons with type 2 diabetes mellitus.

PURPOSE: This study was performed to quantitatively evaluate the prevalence and risk factors of cataracts in Korean patients with type 2 diabetes mellitus. METHODS: Eight hundred fifty patients (males: 342, mean age: 58.07 +/- 8.60 years) with diabetes who underwent ophthalmologic evaluation were studied retrospectively. Diabetic patients were classified into a cataract group and control group (i.e. a group without cataracts). Risk factors like sex, age, duration of diabetes, fasting blood sugar, HbA1c, BUN, creatinine, and total cholesterol were compared between patients with and without cataracts. RESULTS: Four hundred twenty-five patients (50.00%) had cataracts at evaluation. Females were more common in the cataract group than the control group. The mean age did not differ between the two groups. Total cholesterol, triglyceride, and LDL cholesterol levels were not different between the two groups. Duration of diabetes was significantly longer in patients in the cataract group than in the control group (13.03 +/- 6.96 years vs. 7.03 +/- 6.04 years, p < 0.001). The patients in the cataract group also had higher levels of HbA1c, BUN, creatinine, and fasting blood sugar than those in the control group. Multiple regression analysis revealed that the duration of diabetes (p < 0.001) was significantly correlated with the presence of cataracts. CONCLUSIONS: The duration of diabetes was the most significant risk factor for cataracts in patients with diabetes. This finding indicates that the accumulated effect of hyperglycemia is related to lens transparency in patients with diabetes.